Type Designator: 2N5415
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 115 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
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