Type Designator: 2N4860
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.36 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 6 V
Maximum Drain Current |Id|: 0.02 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 4 nS
Maximum Drain-Source On-State Resistance (Rds): 40 Ohm
Package: TO-18 TO-206AA
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