General Description: Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness. Features: l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ =1.95V @ IC =15A l Extremely enhanced avalanche capability Applications: Power switch circuit of induction cooker(IH). Absolute Maximum Ratings (Tj= 25? unless otherwise specified):
Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V VGES Gate- Emitter Voltage ±20 V IC Collector Current@TC = 25 °C 30 A Collector Current @TC = 100 °C 15 A ICM a1 Pulsed Collector Current@TC = 25 °C 45 A IF Diode Continuous Forward Current @TC = 100 °C 15 A IFM Diode Maximum Forward Current@TC = 25 °C 45 A PD Power Dissipation @ TC = 25°C 156 W Power Dissipation @TC = 100 °C 62 W TJ,Tstg Operating Junction and Storage Temperature Range 150,-55 to +150 ? TL Maximum Temperature for Soldering 270 ? Thermal Characteristics Symbol Parameter Typ. Max. Units R?JC Thermal Resistance,Junction to case for IGBT 0.55 0.8 ?/W R?JA Thermal Resistance,Junction toAmbient 35 40 ?/W
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