Case Connection |
ISOLATED |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Drain Current-Max (ID) |
12.0 A |
Drain-source On Resistance-Max |
0.1 ohm |
DS Breakdown Voltage-Min |
60.0 V |
Feedback Cap-Max (Crss) |
160.0 pF |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code |
R-PSFM-T3 |
Number of Elements |
1.0 |
Number of Terminals |
3 |
Operating Mode |
ENHANCEMENT MODE |
Operating Temperature-Max |
150.0 Cel |
Package Body Material |
PLASTIC/EPOXY |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Polarity/Channel Type |
N-CHANNEL |
Power Dissipation Ambient-Max |
25.0 W |
Pulsed Drain Current-Max (IDM) |
48.0 A |
Qualification Status |
Not Qualified |
Surface Mount |
NO |
Terminal Form |
THROUGH-HOLE |
Terminal Position |
SINGLE |
Transistor Application |
SWITCHING |
Transistor Element Material |
SILICON |
Turn-off Time-Max (toff) |
170.0 ns |
Turn-on Time-Max (ton) |
75.0 ns |
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