Type Designator: 2SK1118
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 56 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm
Package: SC67
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