HM-6514 1024 x 4 static CMOS RAM
Features
• Low Power Standby 125µW Max
• Low Power Operation 35mW/MHz Max
• Data Retention at 2.0V Min
• TTL Compatible Input/Output
• Common Data Input/Output
• Three-State Output
• Standard JEDEC Pinout
• Fast Access Time 120/200ns Max
• 18 Pin Package for High Density
• On-Chip Address Register
• Gated Inputs - No Pull Up or Pull Down Resistors Required Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.
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